Material Science
Actuator
5%
Al2O3
17%
Anisotropic Magnetoresistance
15%
Anisotropy
30%
Capacitor
5%
Carrier Concentration
10%
Charge Carrier
10%
Defect Structure
8%
Density
20%
Domain Wall
14%
Electrical Resistivity
19%
Electron Transfer
34%
Electronic Circuit
5%
Electronic Property
9%
Electronic Structure
7%
Ferroelectric Material
8%
Film
70%
Grain Boundary
5%
Graphene
21%
Heterojunction
10%
Hot Electron
59%
Lineshape
5%
Magnetic Memory
5%
Magneto-Transport
5%
Magnetoresistance
32%
Materials Class
5%
Mechanical Strength
8%
Neuromorphic Computing
16%
Oxide Compound
65%
Oxide Semiconductor
27%
Oxygen Vacancy
6%
Permittivity
18%
Physical Property
5%
Piezoelectricity
5%
Pulsed Laser Deposition
6%
Scanning Transmission Electron Microscopy
5%
Schottky Barrier
28%
Semiconductor Structure
5%
Silver Ion
12%
Spin Polarization
22%
Spin Relaxation
5%
Superconducting Film
10%
Superconducting Material
37%
Thin Films
100%
Titanium Dioxide
10%
Transistor
24%
Transition Metal Oxide
10%
Tunneling Magnetoresistance
14%
Vortex
18%
X-Ray Diffraction
5%
Engineering
Attenuation Length
10%
Barrier Height
5%
Component Lifetime
5%
Current Collector
6%
Defect Structure
5%
Defects
14%
Domain Wall
8%
Electric Field
16%
Electromechanical Behavior
5%
Electrostatics
5%
Energy Distribution
8%
Energy Engineering
10%
Ferromagnet
20%
Filtration
10%
Grain Boundary
5%
Graphene
5%
Heterojunctions
11%
Heterostructures
10%
Hole Pair
10%
Hot Electron
40%
Hysteresis Loop
7%
Injection Length
10%
Low-Temperature
8%
Magnetic Field
23%
Magnetic Tunnel Junction
14%
Magnetoelectronics
10%
Measured Voltage
5%
Microwave Frequency
26%
Nanoscale
16%
Nonequilibrium
10%
Oxygen Ion
11%
Plane Anisotropy
5%
Pulsed Laser
9%
Ray Diffraction
5%
Scanning Tunneling Microscope
12%
Secondary Electrons
10%
Semiconductor Structure
5%
Semiconductor Type
8%
Silver Ion
8%
Spatial Resolution
5%
Superconductor
23%
Surface Resistance
17%
Tasks
5%
Temperature Field
10%
Tensiles
5%
Thin Films
49%
Transmissions
19%
Tunnel Construction
8%
Valence Band
13%
Vortex
12%
Keyphrases
Angular Magnetoresistance
5%
Anisotropy Control
5%
Antiferromagnetic Phase
5%
Columnar Defects
5%
Conductivity Studies
5%
Confidence Interval
5%
Degenerate Semiconductors
5%
Electric Field (E-field)
7%
Electric Field Modulation
5%
Emission Microscopy
5%
Epitaxial
8%
Ferromagnet
5%
Ferromagnetic Phase
5%
Fluctuation Conductivity
5%
Hot Electron Transport
5%
Injection Length
10%
La0.67Ca0.33MnO3
16%
La0.7Ca0.3MnO3
10%
LaAlO3
6%
Latent Track
5%
Magnetic Hysteresis
5%
Magnetoresistance
5%
Memristive Behavior
5%
Memristive Memory
5%
Memristor-based
10%
Metallic Ferromagnet
5%
Microwave Frequency
16%
Morphology Control
5%
N-doping
5%
Nb-doped SrTiO3
9%
Ni80Fe20
5%
Nonreciprocity
5%
Peak Effect
16%
Perpendicular Spin
5%
Resistive Switching
5%
Schottky Device
5%
Schottky Interface
5%
Self-injection
10%
Skyrmion Bubbles
5%
Spin Asymmetry
5%
Superconductor
5%
Surface Anisotropy
10%
Surface Resistance
8%
Swift
5%
Temperature Field
5%
Tunneling Anisotropic Magnetoresistance
8%
Typos
5%
Vortex Dynamics
10%
YBa2Cu3O7
7%
YBa2Cu3O7-δ Thin Film
6%
