A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

C.J. Brabec; C. Winder; N.S. Sariciftci; J.C. Hummelen; A. Dhanabalan; P.A. van Hal; R.A.J. Janssen

doi:10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N

A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

C.J. Brabec
, C. Winder
, N.S. Sariciftci
, J.C. Hummelen
, A. Dhanabalan
, P.A. van Hal
, R.A.J. Janssen

Research output: Contribution to journal › Article › Academic › peer-review

528 Citations (Scopus)

1498 Downloads (Pure)

Abstract

A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) as an active layer shows promising power conversion efficiencies up to 1% under AM1.5 illumination. Furthermore, electroluminescent devices (light-emitting diodes) from thin films of pristine PTPTB show near infrared emission peaking at 800 nm with a turn on voltage below 4 V. The electroluminescence can be significantly enhanced by sensitization of this material with a wide bandgap material such as the poly(p-phenylene vinylene) derivative MDMO-PPV.

Original language	English
Pages (from-to)	709-712
Number of pages	4
Journal	Advanced Functional Materials
Volume	12
Issue number	10
DOIs	https://doi.org/10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N
Publication status	Published - Oct-2002

Keywords

PHOTOINDUCED ELECTRON-TRANSFER
CONJUGATED POLYMERS
SOLAR-CELLS
ELECTROLUMINESCENCE
EFFICIENT
HETEROJUNCTIONS
EMISSION

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@article{0a566b0da9f047a69f4b92879f00cec8,

title = "A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes",

abstract = "A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) as an active layer shows promising power conversion efficiencies up to 1\% under AM1.5 illumination. Furthermore, electroluminescent devices (light-emitting diodes) from thin films of pristine PTPTB show near infrared emission peaking at 800 nm with a turn on voltage below 4 V. The electroluminescence can be significantly enhanced by sensitization of this material with a wide bandgap material such as the poly(p-phenylene vinylene) derivative MDMO-PPV.",

keywords = "PHOTOINDUCED ELECTRON-TRANSFER, CONJUGATED POLYMERS, SOLAR-CELLS, ELECTROLUMINESCENCE, EFFICIENT, HETEROJUNCTIONS, EMISSION",

author = "C.J. Brabec and C. Winder and N.S. Sariciftci and J.C. Hummelen and A. Dhanabalan and \{van Hal\}, P.A. and R.A.J. Janssen",

note = "Journal CT 11LY DV FUNCT MATER",

year = "2002",

month = oct,

doi = "10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N",

language = "English",

volume = "12",

pages = "709--712",

journal = "Advanced Functional Materials",

publisher = "WILEY-V C H VERLAG GMBH",

number = "10",

}

TY - JOUR

T1 - A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

AU - Brabec, C.J.

AU - Winder, C.

AU - Sariciftci, N.S.

AU - Hummelen, J.C.

AU - Dhanabalan, A.

AU - van Hal, P.A.

AU - Janssen, R.A.J.

N1 - Journal CT 11LY DV FUNCT MATER

PY - 2002/10

Y1 - 2002/10

N2 - A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) as an active layer shows promising power conversion efficiencies up to 1% under AM1.5 illumination. Furthermore, electroluminescent devices (light-emitting diodes) from thin films of pristine PTPTB show near infrared emission peaking at 800 nm with a turn on voltage below 4 V. The electroluminescence can be significantly enhanced by sensitization of this material with a wide bandgap material such as the poly(p-phenylene vinylene) derivative MDMO-PPV.

AB - A novel low-bandgap conjugated polymer (PTPTB, E-g = similar to1.6 eV), consisting of alternating electron-rich N-dodecyl-2,5-bis(2'-thienyl)pyrrole (TPT) and electron-deficient 2,1,3-benzothiadiazole (B) units, is introduced for thin-film optoelectronic devices working in the near infrared (NIR). Bulk heterojunction photovoltaic cells from solid-state composite films of PTPTB with the soluble fullerene derivative [6,6]-phenyl C-61 butyric acid methyl ester (PCBM) as an active layer shows promising power conversion efficiencies up to 1% under AM1.5 illumination. Furthermore, electroluminescent devices (light-emitting diodes) from thin films of pristine PTPTB show near infrared emission peaking at 800 nm with a turn on voltage below 4 V. The electroluminescence can be significantly enhanced by sensitization of this material with a wide bandgap material such as the poly(p-phenylene vinylene) derivative MDMO-PPV.

KW - PHOTOINDUCED ELECTRON-TRANSFER

KW - CONJUGATED POLYMERS

KW - SOLAR-CELLS

KW - ELECTROLUMINESCENCE

KW - EFFICIENT

KW - HETEROJUNCTIONS

KW - EMISSION

U2 - 10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N

DO - 10.1002/1616-3028(20021016)12:10<709::AID-ADFM709>3.0.CO;2-N

M3 - Article

VL - 12

SP - 709

EP - 712

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 10

ER -

A low-bandgap semiconducting polymer for photovoltaic devices and infrared emitting diodes

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