Krypton atoms incorporated in sputtered a-silicon films are investigated by means of Kr-83 Mosssbauer spectroscopy. The hyperfine parameters of the (RbI)-Rb-83 source were determined by taking a spectrum against solid krypton. Mossbauer spectra were taken for films containing krypton concentrations up to 7 at.%. A Debye temperature of 116(4) K has been measured for a sample containing 2.83 at.% Kr. The isomer shifts found for all spectra and the high Debye temperature indicate that krypton resides in small highly pressurized precipitates.
|Number of pages||8|
|Journal||Journal of Physics-Condensed Matter|
|Publication status||Published - 18-Mar-1996|
- SOLID KRYPTON