A Mossbauer study of Kr incorporations in sputtered a-Si films

M.F Rosu, L Niesen, A. van Veen, W.G. Sloof

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Krypton atoms incorporated in sputtered a-silicon films are investigated by means of Kr-83 Mosssbauer spectroscopy. The hyperfine parameters of the (RbI)-Rb-83 source were determined by taking a spectrum against solid krypton. Mossbauer spectra were taken for films containing krypton concentrations up to 7 at.%. A Debye temperature of 116(4) K has been measured for a sample containing 2.83 at.% Kr. The isomer shifts found for all spectra and the high Debye temperature indicate that krypton resides in small highly pressurized precipitates.

Original languageEnglish
Pages (from-to)1971-1978
Number of pages8
JournalJournal of Physics-Condensed Matter
Issue number12
Publication statusPublished - 18-Mar-1996



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