A road to hydrogenating graphene by a reactive ion etching plasma

M. Wojtaszek*, N. Tombros, A. Caretta, P. H. M. van Loosdrecht, B. J. van Wees

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

75 Citations (Scopus)
354 Downloads (Pure)

Abstract

We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentration. We emphasize the role of the self-bias of the graphene in suppressing the erosion of the flakes during plasma processing. We show that under the chosen plasma conditions the process does not introduce considerable damage to the graphene sheet and that hydrogenation occurs primarily due to the hydrogen ions from the plasma and not due to fragmentation of water adsorbates on the graphene surface by highly accelerated plasma electrons. For this reason the hydrogenation level can be precisely controlled. The hydrogenation process presented here can be easily implemented in any RIE plasma system. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3638696]

Original languageEnglish
Article number063715
Pages (from-to)063715-1-063715-6
Number of pages6
JournalJournal of Applied Physics
Volume110
Issue number6
DOIs
Publication statusPublished - 15-Sep-2011

Keywords

  • RAMAN-SPECTROSCOPY
  • REVERSIBLE HYDROGENATION
  • GRAPHITE SURFACE
  • ADSORPTION
  • GRAPHANE
  • ATOMS

Cite this