Ambipolar all-polymer bulk heterojunction field-effect transistors

Krisztina Szendrei, Dorota Jarzab, Zhihua Chen, Antonio Facchetti*, Maria A. Loi

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

74 Citations (Scopus)
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Abstract

We demonstrate solution processable all-polymer based field-effect transistors (FETs) exhibiting comparable electron and hole mobilities. The semiconducting layer is a bulk heterojunction of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (n-type polymer) and regioregular poly(3-hexylthiophene) (p-type polymer). These polymers form a type-II heterojunction as revealed by the faster photoluminescence dynamics of the blend compared to the pristine materials. An electron mobiliy of 4 x 10(-3) cm(2)/V s and a hole mobility of 2 x 10(-3) cm(2)/V s were extracted from the transfer characteristics of bottom contact FETs. The balanced mobilities suggest that the active layer is a fine network of the two components, as confirmed by atomic force microscopy phase images.

Original languageEnglish
Pages (from-to)1317 - 1321
Number of pages5
JournalJournal of Materials Chemistry
Volume20
Issue number7
DOIs
Publication statusPublished - 2010

Keywords

  • LIGHT-EMITTING TRANSISTORS
  • THIN-FILM-TRANSISTOR
  • HIGH-MOBILITY
  • CONJUGATED POLYMERS
  • CHARGE-TRANSPORT
  • ORGANIC HETEROSTRUCTURE
  • ELECTRON
  • BLENDS
  • PENTACENE
  • METAL

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