Ambipolar MoS2 Thin Flake Transistors

Yijin Zhang, Jianting Ye*, Yusuke Matsuhashi, Yoshihiro Iwasa

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

604 Citations (Scopus)


Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS2, a member of the transition metal dichalcogenides, an archetypal layered material. The EDLT of the thin flake MoS2 unambiguously displayed ambipolar operation, in contrast to its commonly known bulk property as an n-type semiconductor. High-performance transistor operation characterized by a large "ON" state conductivity in the order of similar to mS and a high on/off ratio >10(2) was realized for both hole and electron transport. Hall effect measurements revealed mobility of 44 and 86 cm(2) V-1 s(-1) for electron and hole, respectively. The hole mobility is twice the value of the electron mobility, and the density of accumulated carrier reached 1 x 10(14) cm(-2), which is 1 order of magnitude larger than conventional FETs with solid dielectrics. The high-density carriers of both holes and electrons can create metallic transport in the MoS2 channel. The present result is not only important for device applications with new functionalities, but the method itself would also act as a protocol to study this class of material for a broader scope of possibilities in accessing their unexplored properties.

Original languageEnglish
Pages (from-to)1136-1140
Number of pages5
JournalNano Letters
Issue number3
Publication statusPublished - Mar-2012


  • Transition metal chalcogenide
  • electric double layer
  • FET

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