@article{7cba90f11b724184b087f8ced9913796,
title = "Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine",
abstract = "The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375-475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques. ",
author = "Parkhomenko, {Roman G.} and {De Luca}, Oreste and {\L}ukasz Ko{\l}odziejczyk and Evgeny Modin and Petra Rudolf and {Mart{\'i}nez Mart{\'i}nez}, Diego and Luis Cunha and Mato Knez",
note = "Funding Information: This work was supported by the Spanish Ministry of Science and Innovation (MICINN) within the framework of the “Programaci{\'o}n Conjunta Internacional” (Grant No. PCIN-2017-134), the Dutch Research Council (Nederlandse Organisatie voor Wetenschappelijk Onderzoek, NWO Grant M-ERA NET 2017 CW project number 732.017.104), the National Science Centre, Poland (agreement number 2016/22/Z/ST5/00693), and the Portuguese Foundation for Science and Technology (FCT) in the framework of the EC project M-ERA-NET2/0012/2016. Publisher Copyright: {\textcopyright} 2021 The Royal Society of Chemistry.",
year = "2021",
month = nov,
day = "14",
doi = "10.1039/d1dt02529e",
language = "English",
volume = "50",
pages = "15062--15070",
journal = "Dalton Transactions",
issn = "1477-9226",
publisher = "ROYAL SOC CHEMISTRY",
number = "42",
}