Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices

S. Sharma*, S. P. Dash, H. Saito, S. Yuasa, B. J. van Wees, R. Jansen

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)
246 Downloads (Pure)

Abstract

The contribution of the spin accumulation to tunneling anisotropy in Si/Al2O3/ferromagnet devices was investigated. Rotation of the magnetization of the ferromagnet from in-plane to perpendicular to the tunnel interface reveals a tunneling anisotropy that depends on the type of the ferromagnet (Fe or Ni) and on the doping of the Si (n or p type). Analysis shows that different contributions to the anisotropy coexist. Besides the regular tunneling anisotropic magnetoresistance, we identify a contribution due to anisotropy of the tunnel spin polarization of the oxide/ferromagnet interface. This causes the spin accumulation to be anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet.

Original languageEnglish
Article number165308
Pages (from-to)165308-1-165308-11
Number of pages11
JournalPhysical Review. B: Condensed Matter and Materials Physics
Volume86
Issue number16
DOIs
Publication statusPublished - 8-Oct-2012

Keywords

  • SPINTRONICS
  • SILICON

Cite this