Atomic layer deposition of SiO2-GeO2 multilayers

Jordi Antoja Lleonart*, Silang Zhou, Kit de Hond, Sizhao Huang, Gertjan Koster, A.J.H.M. (Guus) Rijnders, Beatriz Noheda

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

Original languageEnglish
Article number041601
Number of pages5
JournalApplied Physics Letters
Volume117
Issue number4
DOIs
Publication statusPublished - 27-Jul-2020

Keywords

  • OPTICAL-PROPERTIES
  • GEO2
  • PRECURSOR
  • SIO2
  • OXIDES
  • FILMS

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