Atomic layer deposition of SiO2-GeO2 multilayers

Jordi Antoja Lleonart; Silang Zhou; Kit de Hond; Sizhao Huang; Gertjan Koster; A.J.H.M. (Guus) Rijnders; Beatriz Noheda

doi:10.1063/5.0009844

Atomic layer deposition of SiO2-GeO2 multilayers

Jordi Antoja Lleonart^*, Silang Zhou, Kit de Hond, Sizhao Huang, Gertjan Koster, A.J.H.M. (Guus) Rijnders, Beatriz Noheda

^*Corresponding author for this work

Nanostructures of Functional Oxides

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Abstract

Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

Original language	English
Article number	041601
Number of pages	5
Journal	Applied Physics Letters
Volume	117
Issue number	4
DOIs	https://doi.org/10.1063/5.0009844
Publication status	Published - 27-Jul-2020

Keywords

OPTICAL-PROPERTIES
GEO2
PRECURSOR
SIO2
OXIDES
FILMS

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Atomic layer deposition of SiO2–GeO2multilayersFinal publisher's version, 1.38 MBLicence: CC BY

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title = "Atomic layer deposition of SiO2-GeO2 multilayers",

abstract = "Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.",

keywords = "OPTICAL-PROPERTIES, GEO2, PRECURSOR, SIO2, OXIDES, FILMS",

author = "{Antoja Lleonart}, Jordi and Silang Zhou and {de Hond}, Kit and Sizhao Huang and Gertjan Koster and Rijnders, {A.J.H.M. (Guus)} and Beatriz Noheda",

year = "2020",

month = jul,

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doi = "10.1063/5.0009844",

language = "English",

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T1 - Atomic layer deposition of SiO2-GeO2 multilayers

AU - Antoja Lleonart, Jordi

AU - Zhou, Silang

AU - de Hond, Kit

AU - Huang, Sizhao

AU - Koster, Gertjan

AU - Rijnders, A.J.H.M. (Guus)

AU - Noheda, Beatriz

PY - 2020/7/27

Y1 - 2020/7/27

N2 - Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

AB - Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

KW - OPTICAL-PROPERTIES

KW - GEO2

KW - PRECURSOR

KW - SIO2

KW - OXIDES

KW - FILMS

U2 - 10.1063/5.0009844

DO - 10.1063/5.0009844

M3 - Article

SN - 0003-6951

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041601

ER -

Atomic layer deposition of SiO2-GeO2 multilayers

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