Atomically Resolved Phase Coexistence in VO2 Thin Films

Masoud Ahmadi, Atul Atul*, Sytze de Graaf, Ewout van der Veer, Ansgar Meise, Amir Hossein Tavabi, Marc Heggen, Rafal E. Dunin-Borkowski, Majid Ahmadi, Bart J. Kooi

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
44 Downloads (Pure)

Abstract

Concurrent structural and electronic transformations in VO2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO2 films on a TiO2 (001) substrate, where the dominant part of VO2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO2/VO2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

Original languageEnglish
Pages (from-to)13496–13505
Number of pages10
JournalAcs Nano
Volume18
Issue number21
DOIs
Publication statusPublished - 28-May-2024

Keywords

  • electron microscopy
  • metal−insulator transition
  • oxygen imaging
  • transitional phases
  • VO thin films

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