Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

A. Redondo-Cubero*, K. Lorenz, R. Gago, N. Franco, S. Fernandez-Garrido, P. J. M. Smulders, E. Munoz, E. Calleja, I. M. Watson, E. Alves

*Corresponding author for this work

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    Abstract

    The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.
    Original languageEnglish
    Article number051921
    Number of pages3
    JournalApplied Physics Letters
    Volume95
    Issue number5
    DOIs
    Publication statusPublished - 3-Aug-2009

    Keywords

    • channelling
    • gallium compounds
    • III-V semiconductors
    • internal stresses
    • ion beam effects
    • multilayers
    • wide band gap semiconductors
    • CRYSTALS
    • SIMULATION
    • PROTONS

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