Cascade Annealing of Tungsten Implanted with 5 keV Noble Gas Atoms: A Computer Simulation

G.J. van der Kolk; A. van Veen; L.M. Caspers; J.Th.M. De Hosson

doi:10.1016/0168-583X(84)90298-2

Cascade Annealing of Tungsten Implanted with 5 keV Noble Gas Atoms: A Computer Simulation

G.J. van der Kolk, A. van Veen, L.M. Caspers, J.Th.M. De Hosson

Zernike Institute for Advanced Materials

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Abstract

The trapping of vacancies by implanted atoms is calculated. After low energy implantation (5 keV) of tungsten with heavy noble gas atoms most of the implanted atoms are in substitutional position with one or two vacancies closer than two lattice units. Under the influence of the lattice distortion around the implanted atoms the vacancies follow a preferential migration path towards the implant during annealing. With lattice relaxation simulations migration energies close to the implanted atom are calculated. Monte Carlo theory is applied to obtain trapping probabilities as a function of implant-vacancy separation and temperature. An estimate of the initial implant-vacancy separation follows from collision cascade calculations. The results show that nearby vacancies are trapped by the implanted atoms.

Original language	English
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research Section B%3A Beam Interactions with Materials an
Volume	2
Issue number	1
DOIs	https://doi.org/10.1016/0168-583X(84)90298-2
Publication status	Published - 1984

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title = "Cascade Annealing of Tungsten Implanted with 5 keV Noble Gas Atoms: A Computer Simulation",

abstract = "The trapping of vacancies by implanted atoms is calculated. After low energy implantation (5 keV) of tungsten with heavy noble gas atoms most of the implanted atoms are in substitutional position with one or two vacancies closer than two lattice units. Under the influence of the lattice distortion around the implanted atoms the vacancies follow a preferential migration path towards the implant during annealing. With lattice relaxation simulations migration energies close to the implanted atom are calculated. Monte Carlo theory is applied to obtain trapping probabilities as a function of implant-vacancy separation and temperature. An estimate of the initial implant-vacancy separation follows from collision cascade calculations. The results show that nearby vacancies are trapped by the implanted atoms.",

author = "Kolk, {G.J. van der} and Veen, {A. van} and L.M. Caspers and Hosson, {J.Th.M. De}",

note = "Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre",

year = "1984",

doi = "10.1016/0168-583X(84)90298-2",

language = "English",

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T1 - Cascade Annealing of Tungsten Implanted with 5 keV Noble Gas Atoms

T2 - A Computer Simulation

AU - Kolk, G.J. van der

AU - Veen, A. van

AU - Caspers, L.M.

AU - Hosson, J.Th.M. De

N1 - Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre

PY - 1984

Y1 - 1984

N2 - The trapping of vacancies by implanted atoms is calculated. After low energy implantation (5 keV) of tungsten with heavy noble gas atoms most of the implanted atoms are in substitutional position with one or two vacancies closer than two lattice units. Under the influence of the lattice distortion around the implanted atoms the vacancies follow a preferential migration path towards the implant during annealing. With lattice relaxation simulations migration energies close to the implanted atom are calculated. Monte Carlo theory is applied to obtain trapping probabilities as a function of implant-vacancy separation and temperature. An estimate of the initial implant-vacancy separation follows from collision cascade calculations. The results show that nearby vacancies are trapped by the implanted atoms.

AB - The trapping of vacancies by implanted atoms is calculated. After low energy implantation (5 keV) of tungsten with heavy noble gas atoms most of the implanted atoms are in substitutional position with one or two vacancies closer than two lattice units. Under the influence of the lattice distortion around the implanted atoms the vacancies follow a preferential migration path towards the implant during annealing. With lattice relaxation simulations migration energies close to the implanted atom are calculated. Monte Carlo theory is applied to obtain trapping probabilities as a function of implant-vacancy separation and temperature. An estimate of the initial implant-vacancy separation follows from collision cascade calculations. The results show that nearby vacancies are trapped by the implanted atoms.

U2 - 10.1016/0168-583X(84)90298-2

DO - 10.1016/0168-583X(84)90298-2

M3 - Article

VL - 2

JO - Nuclear Instruments and Methods in Physics Research Section B%3A Beam Interactions with Materials an

JF - Nuclear Instruments and Methods in Physics Research Section B%3A Beam Interactions with Materials an

IS - 1

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