Characterization of ultrasharp field emitters by projection microscopy

M. Fransen, EPN Damen, C Schiller, TL vanRooy, HB Groen, P Kruit

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    14 Citations (Scopus)

    Abstract

    The electron optical brightness and the virtual source size of an ultrasharp field electron emitter were determined by an analysis of Fresnel fringes occurring in point projection microscopy images. Simulating the Fresnel diffraction pattern by taking into account the influence of the source size, the source diameter was determined as 5.2 +/- 1 nm. From additional current density measurements, using the same model, the reduced brightness was calculated. The brightness values obtained ranged from 1 x 10(7) to 3 x 10(9) A/m(2) . sr . V for currents between I pA and 5 nA,. A comparison of our results with the work of other authors is given.

    Original languageEnglish
    Pages (from-to)107-112
    Number of pages6
    JournalApplied Surface Science
    Volume94-5
    DOIs
    Publication statusPublished - Mar-1996
    Event42nd International Field Emission Symposium -
    Duration: 7-Aug-199511-Aug-1995

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