Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Fatemeh Gholamrezaie*, Anne-Marije Andringa, W. S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W. M. Blom, Dago M. de Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

47 Citations (Scopus)
347 Downloads (Pure)
Original languageEnglish
Pages (from-to)241-245
Number of pages5
JournalSmall
Volume8
Issue number2
DOIs
Publication statusPublished - 23-Jan-2012

Keywords

  • organosilanes
  • self-assembly
  • organic field-effect transistors
  • threshold voltage
  • scanning Kelvin-probe microscopy
  • NOISE MARGIN
  • CIRCUITS
  • INTERFACES

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