Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Fatemeh Gholamrezaie; Anne-Marije Andringa; W. S. Christian Roelofs; Alfred Neuhold; Martijn Kemerink; Paul W. M. Blom; Dago M. de Leeuw

doi:10.1002/smll.201101467

Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Fatemeh Gholamrezaie^*, Anne-Marije Andringa, W. S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W. M. Blom, Dago M. de Leeuw

^*Corresponding author for this work

Zernike Institute for Advanced Materials

Research output: Contribution to journal › Article › Academic › peer-review

47 Citations (Scopus)

347 Downloads (Pure)

Original language	English
Pages (from-to)	241-245
Number of pages	5
Journal	Small
Volume	8
Issue number	2
DOIs	https://doi.org/10.1002/smll.201101467
Publication status	Published - 23-Jan-2012

Keywords

organosilanes
self-assembly
organic field-effect transistors
threshold voltage
scanning Kelvin-probe microscopy
NOISE MARGIN
CIRCUITS
INTERFACES

Access to Document

10.1002/smll.201101467

2012SmallGholamrezaie.pdfFinal publisher's version, 629 KB

Cite this

@article{31163715395d4ee09e633466e7e822ca,

title = "Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors",

keywords = "organosilanes, self-assembly, organic field-effect transistors, threshold voltage, scanning Kelvin-probe microscopy, NOISE MARGIN, CIRCUITS, INTERFACES",

author = "Fatemeh Gholamrezaie and Anne-Marije Andringa and Roelofs, {W. S. Christian} and Alfred Neuhold and Martijn Kemerink and Blom, {Paul W. M.} and {de Leeuw}, {Dago M.}",

year = "2012",

month = jan,

day = "23",

doi = "10.1002/smll.201101467",

language = "English",

volume = "8",

pages = "241--245",

journal = "Small",

issn = "1613-6810",

publisher = "WILEY-V C H VERLAG GMBH",

number = "2",

}

Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors. / Gholamrezaie, Fatemeh; Andringa, Anne-Marije; Roelofs, W. S. Christian; Neuhold, Alfred; Kemerink, Martijn; Blom, Paul W. M.; de Leeuw, Dago M.

In: Small, Vol. 8, No. 2, 23.01.2012, p. 241-245.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

AU - Gholamrezaie, Fatemeh

AU - Andringa, Anne-Marije

AU - Roelofs, W. S. Christian

AU - Neuhold, Alfred

AU - Kemerink, Martijn

AU - Blom, Paul W. M.

AU - de Leeuw, Dago M.

PY - 2012/1/23

Y1 - 2012/1/23

KW - organosilanes

KW - self-assembly

KW - organic field-effect transistors

KW - threshold voltage

KW - scanning Kelvin-probe microscopy

KW - NOISE MARGIN

KW - CIRCUITS

KW - INTERFACES

U2 - 10.1002/smll.201101467

DO - 10.1002/smll.201101467

M3 - Article

VL - 8

SP - 241

EP - 245

JO - Small

JF - Small

SN - 1613-6810

IS - 2

ER -