Charge trapping near the Si/SiO2 interface in semiconductor devices

Part of the base current in n-p-n transistors is caused by electrons recombining at the oxide covered base surface. In I²L devices, in which the transistors operate in the upward mode, this component constitutes an appreciable part of the total base current. An explanation of this effect has been given. At normal operation conditions the ungated base surface is nearly intrinsic, which enhances the surface recombination. An at least theoretical solution to this problem is the use of a base oxide with negative charge incorporated. ... Zie: Samenvatting