Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

M. Wimmer; D. Gerlach; R. G. Wilks; S. Scherf; R. Félix; C. Lupulescu; F. Ruske; G. Schondelmaier; K. Lips; J. Hüpkes; M. Gorgoi; W. Eberhardt; B. Rech; M. Bär

doi:10.1016/j.elspec.2013.06.006

Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

M. Wimmer^*, D. Gerlach, R. G. Wilks, S. Scherf, R. Félix, C. Lupulescu, F. Ruske, G. Schondelmaier, K. Lips, J. Hüpkes, M. Gorgoi, W. Eberhardt, B. Rech, M. Bär

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface - more pronounced for aluminum than for zinc - as explanation. Based on these insights the complex chemical interface structure is discussed.

Original language	English
Pages (from-to)	309-313
Number of pages	5
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	190
Issue number	PART B
DOIs	https://doi.org/10.1016/j.elspec.2013.06.006
Publication status	Published - Oct-2013
Externally published	Yes

Keywords

Elemental redistribution
HAXPES
Silicon thin-film solar cell
Silicon/zinc oxide interface
Zinc oxide

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Wimmer, M., Gerlach, D., Wilks, R. G., Scherf, S., Félix, R., Lupulescu, C., Ruske, F., Schondelmaier, G., Lips, K., Hüpkes, J., Gorgoi, M., Eberhardt, W., Rech, B., & Bär, M. (2013). Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy. Journal of Electron Spectroscopy and Related Phenomena, 190(PART B), 309-313. https://doi.org/10.1016/j.elspec.2013.06.006

@article{b3629ae92ee946daa365afb20b00deef,

title = "Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy",

abstract = "Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface - more pronounced for aluminum than for zinc - as explanation. Based on these insights the complex chemical interface structure is discussed.",

keywords = "Elemental redistribution, HAXPES, Silicon thin-film solar cell, Silicon/zinc oxide interface, Zinc oxide",

author = "M. Wimmer and D. Gerlach and Wilks, {R. G.} and S. Scherf and R. F{\'e}lix and C. Lupulescu and F. Ruske and G. Schondelmaier and K. Lips and J. H{\"u}pkes and M. Gorgoi and W. Eberhardt and B. Rech and M. B{\"a}r",

note = "Funding Information: E. Conrad, M. Mertin and F. Sch{\"a}fers are acknowledged for technical support. M.W., F.R., and J.H. thank the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety ( No. 0327693H+A ) and R.G.W., D.G., R.F., and M.B. acknowledge the Helmholtz Association ( VH-NG-423 ) for financial support. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "2013",

month = oct,

doi = "10.1016/j.elspec.2013.06.006",

language = "English",

volume = "190",

pages = "309--313",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "ELSEVIER SCIENCE BV",

number = "PART B",

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Wimmer, M, Gerlach, D, Wilks, RG, Scherf, S, Félix, R, Lupulescu, C, Ruske, F, Schondelmaier, G, Lips, K, Hüpkes, J, Gorgoi, M, Eberhardt, W, Rech, B & Bär, M 2013, 'Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy', Journal of Electron Spectroscopy and Related Phenomena, vol. 190, no. PART B, pp. 309-313. https://doi.org/10.1016/j.elspec.2013.06.006

TY - JOUR

T1 - Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

AU - Wimmer, M.

AU - Gerlach, D.

AU - Wilks, R. G.

AU - Scherf, S.

AU - Félix, R.

AU - Lupulescu, C.

AU - Ruske, F.

AU - Schondelmaier, G.

AU - Lips, K.

AU - Hüpkes, J.

AU - Gorgoi, M.

AU - Eberhardt, W.

AU - Rech, B.

AU - Bär, M.

N1 - Funding Information: E. Conrad, M. Mertin and F. Schäfers are acknowledged for technical support. M.W., F.R., and J.H. thank the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety ( No. 0327693H+A ) and R.G.W., D.G., R.F., and M.B. acknowledge the Helmholtz Association ( VH-NG-423 ) for financial support. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 2013/10

Y1 - 2013/10

N2 - Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface - more pronounced for aluminum than for zinc - as explanation. Based on these insights the complex chemical interface structure is discussed.

AB - Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface - more pronounced for aluminum than for zinc - as explanation. Based on these insights the complex chemical interface structure is discussed.

KW - Elemental redistribution

KW - HAXPES

KW - Silicon thin-film solar cell

KW - Silicon/zinc oxide interface

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84890119723&partnerID=8YFLogxK

U2 - 10.1016/j.elspec.2013.06.006

DO - 10.1016/j.elspec.2013.06.006

M3 - Article

AN - SCOPUS:84890119723

SN - 0368-2048

VL - 190

SP - 309

EP - 313

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - PART B

ER -

Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

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