Complementary circuits based on solution processed low-voltage organic field-effect transistors

James M. Ball, Paul H. Wöbkenberg, Floris B. Kooistra, Jan C. Hummelen, Dago M. de Leeuw, Donal D.C. Bradley, Thomas D. Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)
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Abstract

The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)2368-2370
Number of pages3
JournalSynthetic Metals
Volume159
Issue number21-22
DOIs
Publication statusPublished - Nov-2009

Keywords

  • OFET
  • Organic field-effect transistor
  • Low-voltage
  • Fullerene
  • P3HT
  • Self-assembled monolayer dielectric
  • Phosphonic acid
  • Organic complementary logic
  • Inverter
  • SELF-ASSEMBLED MONOLAYER

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