Continuous Low-Bias Switching of Superconductivity in a MoS2 Transistor

Qihong Chen, Jianming Lu, Lei Liang, Oleksandr Zheliuk, Abdurrahman Ali El Yumin, Jianting Ye

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Abstract

Engineering the properties of quantum electron systems, e.g., tuning the superconducting phase using low driving bias within an easily accessible temperature range, is of great interest for exploring exotic physical phenomena as well as achieving real applications. Here, the realization of continuous field-effect switching between superconducting and non-superconducting states in a few-layer MoS2 transistor is reported. Ionic-liquid gating induces the superconducting state close to the quantum critical point on the top surface of the MoS2, and continuous switching between the super/non-superconducting states is achieved by HfO2 back gating. The superconducting transistor works effectively in the helium-4 temperature range and requires a gate bias as low as approximate to 10 V. The dual-gate device structure and strategy presented here can be easily generalized to other systems, opening new opportunities for designing high-performance 2D superconducting transistors.

Original languageEnglish
Article number1800399
Number of pages6
JournalAdvanced materials
Volume30
Issue number28
DOIs
Publication statusPublished - 12-Jul-2018

Keywords

  • continuous operation
  • ionic gating
  • low-bias switching
  • superconducting transistors
  • transition metal dichalcogenides
  • GATED MOS2
  • TRANSITION
  • TRANSPORT
  • INSULATOR
  • FILMS

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