Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W. J. M. Naber; M. F. Craciun; J. H. J. Lemmens; A. H. Arkenbout; T. T. M. Palstra; A. F. Morpurgo; W. G. van der Wiel

doi:10.1016/j.orgel.2010.01.013

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

W. J. M. Naber^*, M. F. Craciun, J. H. J. Lemmens, A. H. Arkenbout, T. T. M. Palstra, A. F. Morpurgo, W. G. van der Wiel

^*Corresponding author for this work

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Abstract

We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics. (C) 2010 Elsevier B. V. All rights reserved.

Original language	English
Pages (from-to)	743-747
Number of pages	5
Journal	Organic Electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2010.01.013
Publication status	Published - May-2010

Keywords

Spintronics
Organic single-crystal
Field-effect transistor
Ferromagnetic electrodes
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR
SPINTRONICS
PHYSICS
METAL

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@article{ccdb77f80bf7467290478f4a3feb488e,

title = "Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors",

abstract = "We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics. (C) 2010 Elsevier B. V. All rights reserved.",

keywords = "Spintronics, Organic single-crystal, Field-effect transistor, Ferromagnetic electrodes, FIELD-EFFECT TRANSISTORS, SEMICONDUCTOR, SPINTRONICS, PHYSICS, METAL",

author = "Naber, {W. J. M.} and Craciun, {M. F.} and Lemmens, {J. H. J.} and Arkenbout, {A. H.} and Palstra, {T. T. M.} and Morpurgo, {A. F.} and {van der Wiel}, {W. G.}",

year = "2010",

month = may,

doi = "10.1016/j.orgel.2010.01.013",

language = "English",

volume = "11",

pages = "743--747",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "ELSEVIER SCIENCE BV",

number = "5",

}

TY - JOUR

T1 - Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

AU - Naber, W. J. M.

AU - Craciun, M. F.

AU - Lemmens, J. H. J.

AU - Arkenbout, A. H.

AU - Palstra, T. T. M.

AU - Morpurgo, A. F.

AU - van der Wiel, W. G.

PY - 2010/5

Y1 - 2010/5

N2 - We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics. (C) 2010 Elsevier B. V. All rights reserved.

AB - We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but also provides a highly controlled tunnel barrier for overcoming the conductivity mismatch problem when injecting spins from a ferromagnetic metal into a semiconductor. Our FETs provide a significant step towards the realization of a device that integrates FET and spin-valve functionality, one of the major goals of spintronics. (C) 2010 Elsevier B. V. All rights reserved.

KW - Spintronics

KW - Organic single-crystal

KW - Field-effect transistor

KW - Ferromagnetic electrodes

KW - FIELD-EFFECT TRANSISTORS

KW - SEMICONDUCTOR

KW - SPINTRONICS

KW - PHYSICS

KW - METAL

U2 - 10.1016/j.orgel.2010.01.013

DO - 10.1016/j.orgel.2010.01.013

M3 - Article

SN - 1566-1199

VL - 11

SP - 743

EP - 747

JO - Organic Electronics

JF - Organic Electronics

IS - 5

ER -

Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

Abstract

Keywords

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