Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

Fatemeh Gholamrezaie*, Kamal Asadi, Romero A. H. J. Kicken, Bea M. W. Langeveld-Voss, Dago M. de Leeuw, Paul W. M. Blom

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluoriflared monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 x 10(-5) cm(2) V(-1) s(-1). (C) 2011 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)2226-2229
Number of pages4
JournalSynthetic Metals
Volume161
Issue number21-22
DOIs
Publication statusPublished - 2011

Keywords

  • Charge injection
  • Self-assembled monolayer
  • Organic field-effect transistor
  • THIN-FILM TRANSISTORS
  • ELECTRONIC DEVICES
  • CONJUGATED POLYMERS
  • CARRIER INJECTION
  • EFFECT MOBILITY
  • GOLD
  • ALKANETHIOLS
  • INTERFACES
  • RESISTANCE
  • MOLECULES

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