Abstract
We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluoriflared monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 x 10(-5) cm(2) V(-1) s(-1). (C) 2011 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 2226-2229 |
Number of pages | 4 |
Journal | Synthetic Metals |
Volume | 161 |
Issue number | 21-22 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- Charge injection
- Self-assembled monolayer
- Organic field-effect transistor
- THIN-FILM TRANSISTORS
- ELECTRONIC DEVICES
- CONJUGATED POLYMERS
- CARRIER INJECTION
- EFFECT MOBILITY
- GOLD
- ALKANETHIOLS
- INTERFACES
- RESISTANCE
- MOLECULES