Correlation Between Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

Fabio Cicoira, Clara Santato, Franco Dinelli, Mauro Murgia, Maria Antonietta Loi, Fabio Biscarini, Roberto Zamboni, Paul Heremans, Michele Muccini

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The growth of vacuum-sublimed tetracene thin films on silicon dioxide has been investigated from the early stages of the process. The effects of deposition flux and substrate silanization on film morphology and electrical properties have been explored. Tetracene shows an island growth, resulting in films with a granular structure. Both an increase in the deposition flux and the substrate silanization determine a decrease of the grain size and an improvement of the connectivity of the film in direct contact with the substrate. The hole mobility in field-effect transistors based on tetracene thin films, which also generate electroluminescence, increases with the deposition flux and values as high as 0.15 cm2 V–1 s–1 are obtained.
Original languageEnglish
Pages (from-to)375 - 380
Number of pages6
JournalAdvanced Functional Materials
Issue number3
Publication statusPublished - 2005

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