Croissance et caractérisation d'interfaces de fullerènes sur substrats métalliques et semiconducteurs

P. Rudolf, G. Gensterblum, R. Caudano

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Abstract

This paper gives an overview of the changes in the structural, electronic and vibrational properties of C60 brought upon by its interaction with a semiconductor or a metal surface. The focus is on ordered monolayers for which general trends in adsorption geometry are illustrated. Direct and inverse photoemission results show that the molecule is polarised when it is physisorbed on the lamellar semiconductor GeS and demonstrate an important hybridisation of both the occupied and the unoccupied molecular orbitals with substrate electronic states for C60 chemisoption on metals, with or without charge transfer to the C60. Vibrational spectroscopy data reveal the consequences of the symmetry breaking at the interfaceas well as mode specific shifts and intensity variations when charge is transferred to the fullerene, which are discussed in association with electron-phonon coupling effects.
Original languageFrench
Pages (from-to)137-149
Number of pages13
JournalJournal de Physique IV
Volume7
Issue numberC6
DOIs
Publication statusPublished - Dec-1997

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