Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films

Jaroslav Bartak; Veronika Podzemna; Jiri Malek; Gert Eising; Bart J. Kooi

doi:10.1016/j.jnoncrysol.2014.11.017

Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films

Jaroslav Bartak^*
, Veronika Podzemna
, Jiri Malek
, Gert Eising
, Bart J. Kooi

^*Corresponding author for this work

Nanostructured Materials and Interfaces

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

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Abstract

The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed. (C) 2014 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	7-13
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	410
DOIs	https://doi.org/10.1016/j.jnoncrysol.2014.11.017
Publication status	Published - 15-Feb-2015

Keywords

Crystal growth
Ge-Sb-S
Thin films
Optical microscopy
GE-SB-S
NONISOTHERMAL CRYSTALLIZATION KINETICS
PHASE-CHANGE MATERIALS
GLASS-FORMING LIQUIDS
CHALCOGENIDE GLASSES
(GES2)(0.1)(SB2S3)(0.9) GLASS
(GES2)(0.2)(SB2S3)(0.8) GLASS
THERMAL-ANALYSIS
SB2S3
VISCOSITY

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Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin filmsFinal publisher's version, 1.05 MBLicence: Taverne

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@article{ff29b94669ad4d4fb5b42924d0a4ee0e,

title = "Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films",

abstract = "The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed. (C) 2014 Elsevier B.V. All rights reserved.",

keywords = "Crystal growth, Ge-Sb-S, Thin films, Optical microscopy, GE-SB-S, NONISOTHERMAL CRYSTALLIZATION KINETICS, PHASE-CHANGE MATERIALS, GLASS-FORMING LIQUIDS, CHALCOGENIDE GLASSES, (GES2)(0.1)(SB2S3)(0.9) GLASS, (GES2)(0.2)(SB2S3)(0.8) GLASS, THERMAL-ANALYSIS, SB2S3, VISCOSITY",

author = "Jaroslav Bartak and Veronika Podzemna and Jiri Malek and Gert Eising and Kooi, \{Bart J.\}",

year = "2015",

month = feb,

day = "15",

doi = "10.1016/j.jnoncrysol.2014.11.017",

language = "English",

volume = "410",

pages = "7--13",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "ELSEVIER SCIENCE BV",

}

TY - JOUR

T1 - Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films

AU - Bartak, Jaroslav

AU - Podzemna, Veronika

AU - Malek, Jiri

AU - Eising, Gert

AU - Kooi, Bart J.

PY - 2015/2/15

Y1 - 2015/2/15

N2 - The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed. (C) 2014 Elsevier B.V. All rights reserved.

AB - The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed. (C) 2014 Elsevier B.V. All rights reserved.

KW - Crystal growth

KW - Ge-Sb-S

KW - Thin films

KW - Optical microscopy

KW - GE-SB-S

KW - NONISOTHERMAL CRYSTALLIZATION KINETICS

KW - PHASE-CHANGE MATERIALS

KW - GLASS-FORMING LIQUIDS

KW - CHALCOGENIDE GLASSES

KW - (GES2)(0.1)(SB2S3)(0.9) GLASS

KW - (GES2)(0.2)(SB2S3)(0.8) GLASS

KW - THERMAL-ANALYSIS

KW - SB2S3

KW - VISCOSITY

U2 - 10.1016/j.jnoncrysol.2014.11.017

DO - 10.1016/j.jnoncrysol.2014.11.017

M3 - Article

SN - 0022-3093

VL - 410

SP - 7

EP - 13

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films

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Keywords

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