Customizing the Polarity of Single-Walled Carbon-Nanotube Field-Effect Transistors Using Solution-Based Additives

Jorge Mario Salazar-Rios, Aprizal Akbar Sengrian, Wytse Talsma, Herman Duim, Mustapha Abdu-Aguye, Stefan Jung, Nils Froehlich, Sybille Allard, Ullrich Scherf, Maria Antonietta Loi*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
34 Downloads (Pure)

Abstract

Polarity control in semiconducting single-walled carbon-nanotube field-effect transistors (s-SWNT FETs) is important to promote their application in logic devices. The methods to turn the intrinsically ambipolar s-SWNT FETs into unipolar devices that have been proposed until now require extra fabrication steps that make preparation longer and more complex. It is demonstrated that by starting from a highly purified ink of semiconducting single-walled carbon nanotubes sorted by a conjugated polymer, and mixing them with additives, it is possible to achieve unipolar charge transport. The three additives used are benzyl viologen (BV), 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), which give rise to n-type field-effect transistors, and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) which gives rise to p-type transistors. BV and N-DMBI transform the s-SWNTs transistors from ambipolar with mobility of the order of 0.7 cm(2) V-1 s(-1) to n-type with mobility up to 5 cm(2) V-1 s(-1). F-4-TCNQ transform the ambipolar transistors in p-type with mobility up to 16 cm(2) V-1 s(-1).

Original languageEnglish
Article number1900789
Number of pages9
JournalAdvanced electronic materials
Volume6
Issue number3
Early online date29-Nov-2019
DOIs
Publication statusPublished - 2020

Keywords

  • doping
  • field-effect transistors
  • polarity control
  • polymer wrapping
  • single-walled carbon nanotubes
  • N-TYPE DOPANT
  • THRESHOLD VOLTAGE
  • SELECTIVE DISPERSION
  • TEMPERATURE
  • PARAMETERS
  • NETWORKS
  • CIRCUITS
  • POWER

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