@article{299aa610ba834e4bacbf0f0fa6b17123,
title = "DEFECT AND DOPANT DEPTH PROFILES IN BORON-IMPLANTED SILICON STUDIED WITH CHANNELING AND NUCLEAR-REACTION ANALYSIS",
author = "M VOS and DO BOERMA and PJM SMULDERS and S OOSTERHOFF",
year = "1986",
month = oct,
language = "English",
volume = "17",
pages = "234--241",
journal = "Nuclear Instruments \& Methods in Physics Research Section B-Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "ELSEVIER SCIENCE BV",
number = "3",
}