Development of epitaxial nitride-based bilayers for magnetic tunnel junctions

  • D.M. Borsa
  • , S.Y. Grachev
  • , D.O Boerma

    Research output: Contribution to journalArticleAcademicpeer-review

    14 Citations (Scopus)

    Abstract

    This paper reports on the growth and properties of bilayer structures consisting of insulating epitaxial Cu3N films grown on epitaxial ferromagnetic gamma'-Fe4N films. The interface between the layers is successfully probed with Mossbauer spectroscopy. In our fully epitaxial system, no intermixing occurs at the interface. Depending on the growth parameters (gas mixture, deposition temperature), the interface is also free of undesired nitride phases.

    Original languageEnglish
    Pages (from-to)2709-2711
    Number of pages3
    JournalIEEE Transactions on Magnetics
    Volume38
    Issue number5
    DOIs
    Publication statusPublished - Sept-2002
    EventInternational Magnetics Conference (Intermag Europe 2002) - , Netherlands
    Duration: 28-Apr-20022-May-2002

    Keywords

    • copper nitrides
    • epitaxial layers
    • iron nitrides
    • magnetic tunnel junction
    • MBE
    • GAS

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