Disorder is not always bad for charge-to-spin conversion in WTe2

Marcos H. D. Guimaraes; Saroj P. Dash

doi:10.1016/j.matt.2021.04.009

Disorder is not always bad for charge-to-spin conversion in WTe2

Marcos H. D. Guimaraes^*, Saroj P. Dash

^*Corresponding author for this work

Physics of Nanodevices

Research output: Contribution to journal › Editorial › Academic › peer-review

1 Citation (Scopus)

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Abstract

The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

Original language	English
Pages (from-to)	1440-1441
Number of pages	2
Journal	Matter
Volume	4
Issue number	5
DOIs	https://doi.org/10.1016/j.matt.2021.04.009
Publication status	Published - 5-May-2021

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10.1016/j.matt.2021.04.009

Disorder is not always bad for charge-to-spin conversion in WTe2Final publisher's version, 421 KBLicence: Taverne

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title = "Disorder is not always bad for charge-to-spin conversion in WTe2",

abstract = "The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.",

author = "Guimaraes, {Marcos H. D.} and Dash, {Saroj P.}",

year = "2021",

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AU - Guimaraes, Marcos H. D.

AU - Dash, Saroj P.

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N2 - The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

AB - The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

U2 - 10.1016/j.matt.2021.04.009

DO - 10.1016/j.matt.2021.04.009

M3 - Editorial

SN - 2590-2393

VL - 4

SP - 1440

EP - 1441

JO - Matter

JF - Matter

IS - 5

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