Disorder is not always bad for charge-to-spin conversion in WTe2

Marcos H. D. Guimaraes*, Saroj P. Dash

*Corresponding author for this work

Research output: Contribution to journalEditorialAcademicpeer-review

1 Citation (Scopus)
65 Downloads (Pure)


The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

Original languageEnglish
Pages (from-to)1440-1441
Number of pages2
Issue number5
Publication statusPublished - 5-May-2021

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