DOPING DEPENDENCE OF THE CHEMICAL-POTENTIAL IN CUPRATE HIGH-T-C SUPERCONDUCTORS .2. (BI,PB)(2)SR2CA2CU2O10+DELTA

SJ COLLOCOTT, R DRIVER, D VANDERMAREL

    Research output: Contribution to journalArticleAcademicpeer-review

    Abstract

    Using X-ray photoelectron spectroscopy, a systematic study is performed of the doping dependence of the chemical potential mu in (Bi, Pb)(2)Sr2Ca2Cu3O10+delta. The doping is varied by changing the oxygen content of the sample. The measured shift of the chemical potential is compared with present models for the doping behavior of mu in high-T-c materials. Our results show best agreement with the model in which the chemical potential is assumed to shift upon doping the parent insulating material.

    Original languageEnglish
    Pages (from-to)273 - 278
    Number of pages6
    JournalPhysica C: Superconductivity and its Applications
    Volume241
    Issue number3-4
    Publication statusPublished - 15-Jan-1995

    Keywords

    • ELECTRONIC-STRUCTURE
    • PHOTOEMISSION
    • CORE
    • BI2CA1+XSR2-XCU2O8+Y
    • STATES
    • LEVEL

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