Effect of impurities on the mobility of single crystal pentacene

O. D. Jurchescu, J. Baas, T. T. M. Palstra

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We have obtained a hole mobility for the organic conductor pentacene of mu=35 cm(2)/V s at room temperature increasing to mu=58 cm(2)/V sat 225 K. These high mobilities result from a purification process in which 6,13-pentacenequinone was removed by vacuum sublimation. The number of traps is reduced by two orders of magnitude compared with conventional methods. The temperature dependence of the mobility is consistent with the band model for electronic transport. (C) 2004 American Institute of Physics.
Original languageEnglish
Pages (from-to)3061-3063
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number16
DOIs
Publication statusPublished - 19-Apr-2004

Keywords

  • TRANSISTORS
  • GROWTH
  • FILMS

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