TY - JOUR
T1 - Effect of Regiochemistry on Doping and Thermoelectric Properties of n-Doped Fullerene Derivatives
AU - Ferrari, Federico
AU - Rousseva, Sylvia
AU - Villalva, Diego Rosas
AU - Kessels, Ewout
AU - Hummelen, Jan C.
AU - Baran, Derya
AU - Chiechi, Ryan
AU - Koster, L. Jan Anton
N1 - Publisher Copyright:
© 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2025/8/18
Y1 - 2025/8/18
N2 - In recent years, fullerene derivatives have been shown to be a promising candidate for n-type organic thermoelectrics. Adequate tailoring of the solubilizing side chains has proven to be a successful strategy to enhance the performance of these materials. In this work, three different regioisomers of a fullerene derivative are synthesized with two polar diethylene glycol chains. It is shown how small changes in the chemical design alter the assembly properties of the materials, affecting the electronic transport, miscibility with the dopant, and the dielectric properties. It is found that an intermediate crystallinity enables good miscibility, high dielectric constant, and moderate electronic mobility, resulting in a conductivity of 7.7 S cm−1 and a power factor of 35 µW m−1 K−2, among the highest reported for n-doped molecular semiconductors.
AB - In recent years, fullerene derivatives have been shown to be a promising candidate for n-type organic thermoelectrics. Adequate tailoring of the solubilizing side chains has proven to be a successful strategy to enhance the performance of these materials. In this work, three different regioisomers of a fullerene derivative are synthesized with two polar diethylene glycol chains. It is shown how small changes in the chemical design alter the assembly properties of the materials, affecting the electronic transport, miscibility with the dopant, and the dielectric properties. It is found that an intermediate crystallinity enables good miscibility, high dielectric constant, and moderate electronic mobility, resulting in a conductivity of 7.7 S cm−1 and a power factor of 35 µW m−1 K−2, among the highest reported for n-doped molecular semiconductors.
KW - doping
KW - organic semiconductors
KW - regiochemistry
KW - small molecules
UR - https://www.scopus.com/pages/publications/105013552607
U2 - 10.1002/aelm.202500287
DO - 10.1002/aelm.202500287
M3 - Article
AN - SCOPUS:105013552607
SN - 2199-160X
JO - Advanced electronic materials
JF - Advanced electronic materials
M1 - e00287
ER -