GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
|Number of pages||5|
|Journal||Acta Physica Polonica A|
|Publication status||Published - Jul-1999|
|Event||3rd International School and Symposium on Physics in Materials Science (ISSPMS 98) - , Poland|
Duration: 13-Sep-1998 → 19-Sep-1998