Effect of thermal annealing on optical properties of implanted GaAs

M Kulik*, FF Komarov, D Maczka

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.

Original languageEnglish
Pages (from-to)131-135
Number of pages5
JournalActa Physica Polonica A
Volume96
Issue number1
Publication statusPublished - Jul-1999
Event3rd International School and Symposium on Physics in Materials Science (ISSPMS 98) - , Poland
Duration: 13-Sep-199819-Sep-1998

Keywords

  • ION-IMPLANTATION
  • SILICON

Cite this