Effects of carrier doping on the electronic structure and optical spectroscopy of MoS2 multilayers

Recently, 2D-thin-layered TMDCs have been designed that could be beneficial in the miniaturization of electronic components applicable in advanced technologies. One of the 2D-TMDC materials that has emerged as a contender for next-generation electronic devices is atomically thin layered MoS2. This 2D- material exhibits many distinctive features, including its structural, mechanical, high carrier mobility, strong photoluminescence, electronic, and optical properties. This is due to the tunable band gap of the MoS2 bulk semiconductor from the indirect transition (1.2 eV) to the direct transition (1.8 eV) for a monolayer structure.
In this thesis, both experimental and theoretical methods were employed to systematically analyze different properties of 2D-MoS2 films under various controlled conditions. The structural, morphological, electrical, and optical properties of 2D-MoS2 films were inspected experimentally. From a theoretical perspective, various physical properties of janus MoSSe pure monolayer were revealed under the co-doping effect of some selected anion sp-elements on the host 2D-material.