Effects of Cl+ and F+ implantation of oxidation-induced stacking faults in silicon

Three implantation effects were investigated in floating-zone-grown silicon: (a) the effect of Cl+ implantation resulting in the shrinkage of oxidation-induced stacking faults; (b) the effect of F+ implantation giving rise to defaulting of the 1/3 [111] Frank dislocations into 1/2[110] perfect dislocations due to the interaction with 1/6[112¯] Shockley partials; (c) the effect of a combined F+ and Cl+ implantation of dislocation motion. Notwithstanding the limited magnification of double-crystal x-ray topography it proves to be a valuable technique for determination of the effects of implantation, as removal of F; the oxidation layer is unnecessary for observation of the oxidation-induced stacking faults. Moreover, the role of the oxide layer in the Si-SiO2 interface can be followed more appropriately.