Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

M. Gurram*, S. Omar, B. J. van Wees

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

33 Citations (Scopus)
379 Downloads (Pure)

Abstract

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO2/Si substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

Original languageEnglish
Article number032004
Number of pages21
Journal2D Materials
Volume5
Issue number3
DOIs
Publication statusPublished - 1-Jun-2018

Keywords

  • graphene
  • hexagonal boron nitride
  • spin transport
  • tunnel barrier
  • spin injection
  • spin detection
  • spin polarization
  • SINGLE-LAYER GRAPHENE
  • ROOM-TEMPERATURE
  • SUSPENDED GRAPHENE
  • BILAYER GRAPHENE
  • VALVE DEVICES
  • BALLISTIC TRANSPORT
  • EPITAXIAL GRAPHENE
  • RELAXATION
  • TRANSISTOR
  • GROWTH

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