Electronic properties of germanane field-effect transistors

B.N. Madhushankar, A. Kaverzin, T. Giousis, G. Potsi, D. Gournis, P. Rudolf, G.R. Blake, C.H. van der Wal, B.J. van Wees

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Abstract

A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in both electron and hole doped regimes with on/off current ratio of up to 10e5(10e4) and carrier mobilities of 150  cm2 (Vs)−1(70 cm2 (Vs)−1) at 77 K (room temperature). A significant enhancement of the device conductivity under illumination with 650 nm red laser is observed. Our results reveal ambipolar transport properties of germanane with great potential for (opto)electronics applications.
Original languageEnglish
Article number2
Pages (from-to)021009
Number of pages6
Journal2D Materials
Volume4
Issue number2
DOIs
Publication statusPublished - 3-Mar-2017

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