Electronic properties of germanane field-effect transistors

B.N. Madhushankar; A. Kaverzin; T. Giousis; G. Potsi; D. Gournis; P. Rudolf; G.R. Blake; C.H. van der Wal; B.J. van Wees

doi:10.1088/2053-1583/aa57fd

Electronic properties of germanane field-effect transistors

B.N. Madhushankar, A. Kaverzin, T. Giousis, G. Potsi, D. Gournis, P. Rudolf, G.R. Blake, C.H. van der Wal, B.J. van Wees

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Abstract

A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in both electron and hole doped regimes with on/off current ratio of up to 10e5(10e4) and carrier mobilities of 150 cm2 (Vs)−1(70 cm2 (Vs)−1) at 77 K (room temperature). A significant enhancement of the device conductivity under illumination with 650 nm red laser is observed. Our results reveal ambipolar transport properties of germanane with great potential for (opto)electronics applications.

Original language	English
Article number	2
Pages (from-to)	021009
Number of pages	6
Journal	2D Materials
Volume	4
Issue number	2
DOIs	https://doi.org/10.1088/2053-1583/aa57fd
Publication status	Published - 3-Mar-2017

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@article{ce7b0950a8274030b3327dec26c610d3,

title = "Electronic properties of germanane field-effect transistors",

abstract = "A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in both electron and hole doped regimes with on/off current ratio of up to 10e5(10e4) and carrier mobilities of 150 cm2 (Vs)−1(70 cm2 (Vs)−1) at 77 K (room temperature). A significant enhancement of the device conductivity under illumination with 650 nm red laser is observed. Our results reveal ambipolar transport properties of germanane with great potential for (opto)electronics applications.",

author = "B.N. Madhushankar and A. Kaverzin and T. Giousis and G. Potsi and D. Gournis and P. Rudolf and G.R. Blake and {van der Wal}, C.H. and {van Wees}, B.J.",

year = "2017",

month = mar,

day = "3",

doi = "10.1088/2053-1583/aa57fd",

language = "English",

volume = "4",

pages = "021009 ",

journal = "2D Materials",

issn = "2053-1583",

publisher = "IoP Publishing",

number = "2",

}

TY - JOUR

T1 - Electronic properties of germanane field-effect transistors

AU - Madhushankar, B.N.

AU - Kaverzin, A.

AU - Giousis, T.

AU - Potsi, G.

AU - Gournis, D.

AU - Rudolf, P.

AU - Blake, G.R.

AU - van der Wal, C.H.

AU - van Wees, B.J.

PY - 2017/3/3

Y1 - 2017/3/3

N2 - A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in both electron and hole doped regimes with on/off current ratio of up to 10e5(10e4) and carrier mobilities of 150 cm2 (Vs)−1(70 cm2 (Vs)−1) at 77 K (room temperature). A significant enhancement of the device conductivity under illumination with 650 nm red laser is observed. Our results reveal ambipolar transport properties of germanane with great potential for (opto)electronics applications.

AB - A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in both electron and hole doped regimes with on/off current ratio of up to 10e5(10e4) and carrier mobilities of 150 cm2 (Vs)−1(70 cm2 (Vs)−1) at 77 K (room temperature). A significant enhancement of the device conductivity under illumination with 650 nm red laser is observed. Our results reveal ambipolar transport properties of germanane with great potential for (opto)electronics applications.

U2 - 10.1088/2053-1583/aa57fd

DO - 10.1088/2053-1583/aa57fd

M3 - Article

SN - 2053-1583

VL - 4

SP - 021009

JO - 2D Materials

JF - 2D Materials

IS - 2

M1 - 2

ER -

Electronic properties of germanane field-effect transistors

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