Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

P.H.C. Magnée; N. van der Post; P.H.M. Kooistra; B.J. van Wees; T.M. Klapwijk

doi:10.1103/PhysRevB.50.4594

Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

P.H.C. Magnée, N. van der Post, P.H.M. Kooistra, B.J. van Wees, T.M. Klapwijk

Zernike Institute for Advanced Materials

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Abstract

We have studied the conductance enhancement near zero voltage bias of double-barrier Nb-p++Si-E junctions, where we chose for the counterelectrode E either Nb, Al, or W. The experiments show a large correction, ΔG ≈ 0.1GN, on the classical superconductor–insulator–normal-metal (SIN) conductance. We present measurements of the temperature, magnetic-field, and voltage dependence, and we interpret the observed results within the available theoretical models for coherent Andreev reflection, as provided by several authors.

Original language	English
Pages (from-to)	4594-4599
Number of pages	6
Journal	Physical Review. B: Condensed Matter and Materials Physics
Volume	50
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.50.4594
Publication status	Published - 15-Aug-1994

Keywords

ENERGY-GAP STRUCTURE
CARRIER TRANSPORT
CONSTRICTIONS
ELECTRONS
CONTACTS

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@article{b4677af83ed344a0bea1281f0b05d108,

title = "Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions",

abstract = "We have studied the conductance enhancement near zero voltage bias of double-barrier Nb-p++Si-E junctions, where we chose for the counterelectrode E either Nb, Al, or W. The experiments show a large correction, ΔG ≈ 0.1GN, on the classical superconductor–insulator–normal-metal (SIN) conductance. We present measurements of the temperature, magnetic-field, and voltage dependence, and we interpret the observed results within the available theoretical models for coherent Andreev reflection, as provided by several authors.",

keywords = "ENERGY-GAP STRUCTURE, CARRIER TRANSPORT, CONSTRICTIONS, ELECTRONS, CONTACTS",

author = "P.H.C. Magn{\'e}e and Post, {N. van der} and P.H.M. Kooistra and Wees, {B.J. van} and T.M. Klapwijk",

note = "Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre",

year = "1994",

month = aug,

day = "15",

doi = "10.1103/PhysRevB.50.4594",

language = "English",

volume = "50",

pages = "4594--4599",

journal = "Physical Review. B: Condensed Matter and Materials Physics",

issn = "0163-1829",

publisher = "AMER PHYSICAL SOC",

number = "7",

}

TY - JOUR

T1 - Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

AU - Magnée, P.H.C.

AU - Post, N. van der

AU - Kooistra, P.H.M.

AU - Wees, B.J. van

AU - Klapwijk, T.M.

N1 - Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre

PY - 1994/8/15

Y1 - 1994/8/15

N2 - We have studied the conductance enhancement near zero voltage bias of double-barrier Nb-p++Si-E junctions, where we chose for the counterelectrode E either Nb, Al, or W. The experiments show a large correction, ΔG ≈ 0.1GN, on the classical superconductor–insulator–normal-metal (SIN) conductance. We present measurements of the temperature, magnetic-field, and voltage dependence, and we interpret the observed results within the available theoretical models for coherent Andreev reflection, as provided by several authors.

AB - We have studied the conductance enhancement near zero voltage bias of double-barrier Nb-p++Si-E junctions, where we chose for the counterelectrode E either Nb, Al, or W. The experiments show a large correction, ΔG ≈ 0.1GN, on the classical superconductor–insulator–normal-metal (SIN) conductance. We present measurements of the temperature, magnetic-field, and voltage dependence, and we interpret the observed results within the available theoretical models for coherent Andreev reflection, as provided by several authors.

KW - ENERGY-GAP STRUCTURE

KW - CARRIER TRANSPORT

KW - CONSTRICTIONS

KW - ELECTRONS

KW - CONTACTS

U2 - 10.1103/PhysRevB.50.4594

DO - 10.1103/PhysRevB.50.4594

M3 - Article

SN - 0163-1829

VL - 50

SP - 4594

EP - 4599

JO - Physical Review. B: Condensed Matter and Materials Physics

JF - Physical Review. B: Condensed Matter and Materials Physics

IS - 7

ER -

Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions

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