Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

P. J. Zomer; M. H. D. Guimaraes; J. C. Brant; N. Tombros; B. J. van Wees

doi:10.1063/1.4886096

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

P. J. Zomer^*, M. H. D. Guimaraes, J. C. Brant, N. Tombros, B. J. van Wees

^*Corresponding author for this work

Physics of Nanodevices

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.

Original language	English
Article number	013101
Number of pages	4
Journal	Applied Physics Letters
Volume	105
Issue number	1
DOIs	https://doi.org/10.1063/1.4886096
Publication status	Published - 7-Jul-2014

Keywords

SCANNING-TUNNELING-MICROSCOPY
QUANTUM CAPACITANCE
SUSPENDED GRAPHENE
DIRAC FERMIONS
SUPERLATTICES
SPECTROSCOPY
CONFINEMENT
TRANSPORT
DEVICES

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Fast pick up technique for high quality heterostructures of bilayer grapheneand hexagonal boron nitrideFinal publisher's version, 801 KBLicence: Unspecified

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title = "Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride",

abstract = "We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.",

keywords = "SCANNING-TUNNELING-MICROSCOPY, QUANTUM CAPACITANCE, SUSPENDED GRAPHENE, DIRAC FERMIONS, SUPERLATTICES, SPECTROSCOPY, CONFINEMENT, TRANSPORT, DEVICES",

author = "Zomer, {P. J.} and Guimaraes, {M. H. D.} and Brant, {J. C.} and N. Tombros and {van Wees}, {B. J.}",

year = "2014",

month = jul,

day = "7",

doi = "10.1063/1.4886096",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

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TY - JOUR

T1 - Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

AU - Zomer, P. J.

AU - Guimaraes, M. H. D.

AU - Brant, J. C.

AU - Tombros, N.

AU - van Wees, B. J.

PY - 2014/7/7

Y1 - 2014/7/7

N2 - We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.

AB - We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.

KW - SCANNING-TUNNELING-MICROSCOPY

KW - QUANTUM CAPACITANCE

KW - SUSPENDED GRAPHENE

KW - DIRAC FERMIONS

KW - SUPERLATTICES

KW - SPECTROSCOPY

KW - CONFINEMENT

KW - TRANSPORT

KW - DEVICES

U2 - 10.1063/1.4886096

DO - 10.1063/1.4886096

M3 - Article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013101

ER -

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

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