Ferroelastic Domain Walls in BiFeO3 as Memristive Networks

Jan L. Rieck*, Davide Cipollini, Mart Salverda, Cynthia P. Quinteros, Lambert R. B. Schomaker, Beatriz Noheda*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

32 Downloads (Pure)


Electronic conduction along individual domain walls (DWs) is reported in BiFeO3 (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. Herein, it is shown that electronic transport is possible also from wall-to-wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscopy (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step toward investigating DWs as memristive networks for information processing and in-materio computing.
Original languageEnglish
Article number2200292
Number of pages9
JournalAdvanced Intelligent Systems
Issue number1
Early online date10-Nov-2022
Publication statusPublished - Jan-2023


  • BiFeO3
  • conducting atomic force microscopy
  • domain walls
  • ferroelastic domains
  • ferroelectric thin films
  • memristive networks

Cite this