Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
|Conference||2021 IEEE International Symposium on Circuits and Systems (ISCAS)|
|Period||22/05/2021 → 28/05/2021|
- Circuits and systems
- Energy efficiency
- Edge computing