Ferroelectric Tunneling Junctions for Edge Computing

Erika Covi; Quang T. Duong; Suzanne Lancaster; Viktor Havel; Jean Coignus; Justine Barbot; Ole Richter; Philip Klein; Elisabetta Chicca; Laurent Grenouillet; Athanasios Dimoulas; Thomas Mikolajick; Stefan Slesazeck

doi:10.1109/ISCAS51556.2021.9401800

Ferroelectric Tunneling Junctions for Edge Computing

Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philip Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck

Bio-inspired Circuits & Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

93 Downloads (Pure)

Abstract

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

Original language	English
Title of host publication	2021 IEEE International Symposium on Circuits and Systems (ISCAS)
Publisher	IEEE
Pages	1-5
Number of pages	5
ISBN (Print)	978-1-7281-9202-4
DOIs	https://doi.org/10.1109/ISCAS51556.2021.9401800
Publication status	Published - 28-May-2021
Event	2021 IEEE International Symposium on Circuits and Systems (ISCAS) - Daegu, Korea (South) Duration: 22-May-2021 → 28-May-2021

Conference

Conference	2021 IEEE International Symposium on Circuits and Systems (ISCAS)
Period	22/05/2021 → 28/05/2021

Keywords

Circuits and systems
Memristors
Tunneling
Energy efficiency
Junctions
Edge computing

Access to Document

10.1109/ISCAS51556.2021.9401800

Ferroelectric Tunneling Junctions for Edge ComputingFinal publisher's version, 1.51 MBLicence: Taverne

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Cite this

Covi, E., Duong, Q. T., Lancaster, S., Havel, V., Coignus, J., Barbot, J., Richter, O., Klein, P., Chicca, E., Grenouillet, L., Dimoulas, A., Mikolajick, T., & Slesazeck, S. (2021). Ferroelectric Tunneling Junctions for Edge Computing. In 2021 IEEE International Symposium on Circuits and Systems (ISCAS) (pp. 1-5). [9401800] IEEE. https://doi.org/10.1109/ISCAS51556.2021.9401800

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abstract = "Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.",

keywords = "Circuits and systems, Memristors, Tunneling, Energy efficiency, Junctions, Edge computing",

author = "Erika Covi and Duong, {Quang T.} and Suzanne Lancaster and Viktor Havel and Jean Coignus and Justine Barbot and Ole Richter and Philip Klein and Elisabetta Chicca and Laurent Grenouillet and Athanasios Dimoulas and Thomas Mikolajick and Stefan Slesazeck",

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Covi, E, Duong, QT, Lancaster, S, Havel, V, Coignus, J, Barbot, J, Richter, O , Klein, P , Chicca, E, Grenouillet, L, Dimoulas, A, Mikolajick, T & Slesazeck, S 2021, Ferroelectric Tunneling Junctions for Edge Computing. in 2021 IEEE International Symposium on Circuits and Systems (ISCAS)., 9401800, IEEE, pp. 1-5, 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 22/05/2021. https://doi.org/10.1109/ISCAS51556.2021.9401800

TY - GEN

T1 - Ferroelectric Tunneling Junctions for Edge Computing

AU - Covi, Erika

AU - Duong, Quang T.

AU - Lancaster, Suzanne

AU - Havel, Viktor

AU - Coignus, Jean

AU - Barbot, Justine

AU - Richter, Ole

AU - Klein, Philip

AU - Chicca, Elisabetta

AU - Grenouillet, Laurent

AU - Dimoulas, Athanasios

AU - Mikolajick, Thomas

AU - Slesazeck, Stefan

PY - 2021/5/28

Y1 - 2021/5/28

N2 - Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

AB - Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

KW - Circuits and systems

KW - Memristors

KW - Tunneling

KW - Energy efficiency

KW - Junctions

KW - Edge computing

U2 - 10.1109/ISCAS51556.2021.9401800

DO - 10.1109/ISCAS51556.2021.9401800

M3 - Conference contribution

SN - 978-1-7281-9202-4

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BT - 2021 IEEE International Symposium on Circuits and Systems (ISCAS)

PB - IEEE

T2 - 2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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ER -