Ferroelectric Tunneling Junctions for Edge Computing

Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philip Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

12 Citations (Scopus)
190 Downloads (Pure)


Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems (ISCAS)
Number of pages5
ISBN (Print)978-1-7281-9202-4
Publication statusPublished - 28-May-2021
Event2021 IEEE International Symposium on Circuits and Systems (ISCAS) - Daegu, Korea (South)
Duration: 22-May-202128-May-2021


Conference2021 IEEE International Symposium on Circuits and Systems (ISCAS)


  • Circuits and systems
  • Memristors
  • Tunneling
  • Energy efficiency
  • Junctions
  • Edge computing


Dive into the research topics of 'Ferroelectric Tunneling Junctions for Edge Computing'. Together they form a unique fingerprint.

Cite this