Abstract
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
Original language | English |
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Title of host publication | 2021 IEEE International Symposium on Circuits and Systems (ISCAS) |
Publisher | IEEE |
Pages | 1-5 |
Number of pages | 5 |
ISBN (Print) | 978-1-7281-9202-4 |
DOIs | |
Publication status | Published - 28-May-2021 |
Event | 2021 IEEE International Symposium on Circuits and Systems (ISCAS) - Daegu, Korea (South) Duration: 22-May-2021 → 28-May-2021 |
Conference
Conference | 2021 IEEE International Symposium on Circuits and Systems (ISCAS) |
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Period | 22/05/2021 → 28/05/2021 |
Keywords
- Circuits and systems
- Memristors
- Tunneling
- Energy efficiency
- Junctions
- Edge computing