Field-dependent permittivity in metal-semiconducting SrTiO3 Schottky diodes

R. A. van der Berg, P. W. M. Blom, J. F. M. Cillessen, R. M. Wolf

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Abstract

The field dependence of the dielectric constant of SrTiO3 is investigated using the capacitance versus bias voltage characteristics of various metal‐SrTiO3:Nb Schottky diodes. The relative dielectric constant is shown to decrease one order of magnitude for electric fields ranging from 0.1 to 10 MV/cm. At low fields the permittivity follows the Curie–Weiss law, whereas at fields larger than 500 kV/cm the permittivity is nearly temperature independent. At high doping densities the field dependent permittivity gives rise to a reduction of the depletion width of the Schottky diode.
Original languageEnglish
Pages (from-to)697 - 699
Number of pages3
JournalApplied Physics Letters
Volume66
Issue number6
DOIs
Publication statusPublished - 1995

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