Field-Effect Transistors Based on Formamidinium Tin Triiodide Perovskite

Shuyan Shao, Wytse Talsma, Matteo Pitaro, Jingjin Dong, Simon Kahmann, Alexander Joseph Rommens, Giuseppe Portale, Maria Antonietta Loi*

*Corresponding author for this work

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Abstract

To date, there are no reports of 3D tin perovskite being used as a semiconducting channel in field-effect transistors (FETs). This is probably due to the large amount of trap states and high p-doping typical of this material. Here, the first top-gate bottom-contact FET using formamidinium tin triiodide perovskite films is reported as a semiconducting channel. These FET devices show a hole mobility of up to 0.21 cm(2) V-1 s(-1), an I-ON/OFF ratio of 10(4), and a relatively small threshold voltage (V-TH) of 2.8 V. Besides the device geometry, the key factor explaining this performance is the reduced doping level of the active layer. In fact, by adding a small amount of the 2D material in the 3D tin perovskite, the crystallinity of FASnI(3) is enhanced, and the trap density and hole carrier density are reduced by one order of magnitude. Importantly, these transistors show enhanced parameters after 20 months of storage in a N-2 atmosphere.

Original languageEnglish
Article number2008478
Number of pages8
JournalAdvanced Functional Materials
DOIs
Publication statusE-pub ahead of print - 20-Jan-2021

Keywords

  • 3D tin perovskite
  • dedoping
  • field-effect transistor
  • formamidinium tin triiodide
  • hole mobility

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