Floating-Gate-Based Intrinsic Plasticity with Low-Voltage Rate Control

S. Nease; E. Chicca

doi:10.1109/ISCAS.2016.7539102

Floating-Gate-Based Intrinsic Plasticity with Low-Voltage Rate Control

S. Nease, E. Chicca

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

10 Citations (Scopus)

Abstract

Homeostatic intrinsic plasticity is a neurobiological mechanism which adapts a neuron's channel properties over long timescales to achieve a desired average firing rate. This mechanism works to stabilize neural network dynamics. We present simulation results of a neuromorphic circuit implementation of homeostatic intrinsic plasticity using floating-gate transistors. While high voltages are required for tunneling and injection, the control parameter in our implementation is a low voltage, allowing for easy interfacing with typical analog CMOS control circuitry.

Original language	English
Title of host publication	2016 IEEE International Symposium on Circuits and Systems (ISCAS)
Publisher	IEEE
Pages	2507-2510
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2016.7539102
Publication status	Published - 2016
Externally published	Yes

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Floating-gate-based intrinsic plasticity with low-voltage rate control
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@inproceedings{09756d0484804148b82f15483228da2a,

title = "Floating-Gate-Based Intrinsic Plasticity with Low-Voltage Rate Control",

abstract = "Homeostatic intrinsic plasticity is a neurobiological mechanism which adapts a neuron's channel properties over long timescales to achieve a desired average firing rate. This mechanism works to stabilize neural network dynamics. We present simulation results of a neuromorphic circuit implementation of homeostatic intrinsic plasticity using floating-gate transistors. While high voltages are required for tunneling and injection, the control parameter in our implementation is a low voltage, allowing for easy interfacing with typical analog CMOS control circuitry.",

author = "S. Nease and E. Chicca",

year = "2016",

doi = "10.1109/ISCAS.2016.7539102",

language = "English",

pages = "2507--2510",

booktitle = "2016 IEEE International Symposium on Circuits and Systems (ISCAS)",

publisher = "IEEE",

}

TY - GEN

T1 - Floating-Gate-Based Intrinsic Plasticity with Low-Voltage Rate Control

AU - Nease, S.

AU - Chicca, E.

PY - 2016

Y1 - 2016

N2 - Homeostatic intrinsic plasticity is a neurobiological mechanism which adapts a neuron's channel properties over long timescales to achieve a desired average firing rate. This mechanism works to stabilize neural network dynamics. We present simulation results of a neuromorphic circuit implementation of homeostatic intrinsic plasticity using floating-gate transistors. While high voltages are required for tunneling and injection, the control parameter in our implementation is a low voltage, allowing for easy interfacing with typical analog CMOS control circuitry.

AB - Homeostatic intrinsic plasticity is a neurobiological mechanism which adapts a neuron's channel properties over long timescales to achieve a desired average firing rate. This mechanism works to stabilize neural network dynamics. We present simulation results of a neuromorphic circuit implementation of homeostatic intrinsic plasticity using floating-gate transistors. While high voltages are required for tunneling and injection, the control parameter in our implementation is a low voltage, allowing for easy interfacing with typical analog CMOS control circuitry.

U2 - 10.1109/ISCAS.2016.7539102

DO - 10.1109/ISCAS.2016.7539102

M3 - Conference contribution

SP - 2507

EP - 2510

BT - 2016 IEEE International Symposium on Circuits and Systems (ISCAS)

PB - IEEE

ER -

Floating-Gate-Based Intrinsic Plasticity with Low-Voltage Rate Control

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