Formation of a Stable p-n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

Y. J. Zhang*, J. T. Ye, Y. Yornogida, T. Takenobu, Y. Iwasa

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

159 Citations (Scopus)

Abstract

Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

Original languageEnglish
Pages (from-to)3023-3028
Number of pages6
JournalNano Letters
Volume13
Issue number7
DOIs
Publication statusPublished - Jul-2013

Keywords

  • Molybdenum disulfide
  • electric double-layer transistor
  • ambipolar
  • p-n junction
  • LIGHT-EMITTING TRANSISTORS
  • THIN-FILM TRANSISTORS
  • SINGLE-CRYSTAL
  • VALLEY POLARIZATION
  • MONOLAYER MOS2
  • EMISSION

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