Formation of inversion layers in organic field-effect transistors

J. J. Brondijk*, M. Spijkman, F. van Seijen, P. W. M. Blom, D. M. de Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)
418 Downloads (Pure)

Abstract

An inversion current in unipolar organic field-effect transistors is not observed, which can be due to trapping of electrons or to negligible electron injection. Here, we distinguish between both cases by studying the depletion current of unipolar p-type transistors based on a deliberately doped organic semiconductor. For each doping level, the current can be completely pinched off, which unambiguously shows that no inversion layer is formed. Numerical calculations show that for electron injection barriers >1 eV, the transistor is thermodynamically not in equilibrium, such that a steady state is not reached in the time frame of the experiment.

Original languageEnglish
Article number165310
Pages (from-to)165310-1-165310-7
Number of pages7
JournalPhysical Review. B: Condensed Matter and Materials Physics
Volume85
Issue number16
DOIs
Publication statusPublished - 12-Apr-2012

Keywords

  • EFFECT MOBILITY
  • SEMICONDUCTORS
  • SURFACE

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