Gate-controlled magnetoresistance of a paramagnetic insulator|platinum interface

Lei Liang, Juan Shan, Qihong Chen, Jianming Lu, Graeme Blake, Thomas Palstra, Gerrit Ernst-Wilhelm Bauer, Bart van Wees, Jianting Ye

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Abstract

We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.
Original languageEnglish
Article number134402
Number of pages13
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume98
Issue number13
DOIs
Publication statusPublished - 1-Oct-2018

Keywords

  • PERPENDICULAR MAGNETIC-ANISOTROPY
  • ELECTRIC-FIELD CONTROL
  • FERROMAGNETIC SEMICONDUCTOR
  • TUNNELING MAGNETORESISTANCE
  • GRANULAR FERROMAGNETS
  • ROOM-TEMPERATURE
  • EXCHANGE
  • LIQUID
  • ALLOYS
  • MOMENT

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