Growth and properties of strained VOx thin films with controlled stoichiometry

AD Rata*, AR Chezan, MW Haverkort, HH Hsieh, HJ Lin, CT Chen, LH Tjeng, T Hibma

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

23 Citations (Scopus)

Abstract

We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using O-18(2)-Rutherford backscattering spectrometry and the vanadium valence using x-ray-absorption spectroscopy. The upper and lower stoichiometry limits found are similar to those known for bulk material (0.8

Original languageEnglish
Article number075404
Number of pages11
JournalPhysical Review. B: Condensed Matter and Materials Physics
Volume69
Issue number7
DOIs
Publication statusPublished - Feb-2004

Keywords

  • X-RAY-ABSORPTION
  • TRANSITION-METAL OXIDES
  • VANADIUM-OXIDES
  • 3D-TRANSITION-METAL OXIDES
  • XPS
  • SEMICONDUCTORS
  • SPECTROSCOPY
  • THRESHOLD
  • MONOXIDE
  • PD(111)

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