Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Pavan Nukala; Yingfen Wei; Vincent de Haas; Qikai Guo; Jordi Antoja-Lleonart; Beatriz Noheda

doi:10.1080/00150193.2020.1791658

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Pavan Nukala^*, Yingfen Wei, Vincent de Haas, Qikai Guo, Jordi Antoja-Lleonart, Beatriz Noheda^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca2(1)) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading toward identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).

Original language	English
Pages (from-to)	148-163
Number of pages	16
Journal	Ferroelectrics
Volume	569
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2020.1791658
Publication status	Published - 9-Dec-2020

Keywords

Polar rhombohedral phase
epitaxial (111) Hf0 .5Zr0.5O2 thin-films
compressive strain

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Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0 5Zr0 5O2 thin filmsFinal publisher's version, 3.35 MBLicence: CC BY-NC-ND

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title = "Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films",

abstract = "The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca2(1)) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading toward identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).",

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T1 - Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

AU - Nukala, Pavan

AU - Wei, Yingfen

AU - de Haas, Vincent

AU - Guo, Qikai

AU - Antoja-Lleonart, Jordi

AU - Noheda, Beatriz

PY - 2020/12/9

Y1 - 2020/12/9

N2 - The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca2(1)) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading toward identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).

AB - The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar orthorhombic (o-) phase (Pca2(1)) is widely regarded as the responsible phase for ferroelectricity, a higher energy polar rhombohedral (r-) phase is recently reported on epitaxial HfZrO4 (HZO) films grown on (001) SrTiO3 (R3m or R3), (0001) GaN (R3), and Si (111). Armed with results on these systems, here we report a systematic study leading toward identifying comprehensive global trends for stabilizing r-phase polymorphs in epitaxially grown HZO thin films (6 nm) on various substrates (perovskites, hexagonal and Si).

KW - Polar rhombohedral phase

KW - epitaxial (111) Hf0 .5Zr0.5O2 thin-films

KW - compressive strain

U2 - 10.1080/00150193.2020.1791658

DO - 10.1080/00150193.2020.1791658

M3 - Article

SN - 0015-0193

VL - 569

SP - 148

EP - 163

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

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Keywords

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