High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectric

R.C.G. Naber, M Mulder, B de Boer, PWM Blom*, DM de Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

85 Citations (Scopus)
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Abstract

Organic field-effect transistors (OFETs) typically exhibit either a high charge transport mobility or a high charge density. Here we demonstrate an OFET in which both the mobility and the charge density have high values of 0.1 cm(2)/V s and 28 mC/m(2), respectively. The high charge density is induced by the ferroelectric polarization of the gate dielectric poly(vinylidene fluoride/trifluoroethylene). The high mobility is achieved in a regioregular poly(3-hexylthiophene) semiconductor using a transistor with a top-gate layout that inherently exhibits a smooth semiconductor-dielectric interface. The combination of high mobility and charge density yields a record conductance value for polymer-based FETs of 0.3 mu S. (c) 2005 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)132-136
Number of pages5
JournalOrganic Electronics
Volume7
Issue number3
DOIs
Publication statusPublished - Jun-2006

Keywords

  • poly(3-hexylthiophene)
  • ferroelectric polymer
  • field-effect transistor
  • FIELD-EFFECT TRANSISTORS
  • THIN-FILM TRANSISTORS
  • PERFORMANCE
  • INSULATORS
  • DISPLAYS

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