High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

Satria Zulkarnaen Bisri; Jia Gao; Vladimir Derenskyi; Widianta Gomulya; Igor Iezhokin; Pavlo Gordiichuk; Andreas Herrmann; Maria Antonietta Loi

doi:10.1002/adma.201202699

High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

Satria Zulkarnaen Bisri^*, Jia Gao, Vladimir Derenskyi, Widianta Gomulya, Igor Iezhokin, Pavlo Gordiichuk, Andreas Herrmann, Maria Antonietta Loi

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

Original language	English
Pages (from-to)	6147-6152
Number of pages	6
Journal	Advanced materials
Volume	24
Issue number	46
DOIs	https://doi.org/10.1002/adma.201202699
Publication status	Published - 4-Dec-2012

Keywords

carbon nanotubes
ambipolar field-effect transistors
percolation network
selective dispersion
THIN-FILM TRANSISTORS
SELECTIVE DISPERSION
INTEGRATED-CIRCUITS
LOGIC-CIRCUITS
MOBILITY
INKS
POLYMERS
PROGRESS
DEVICES
ARRAYS

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10.1002/adma.201202699

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Cite this

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title = "High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes",

abstract = "Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.",

keywords = "carbon nanotubes, ambipolar field-effect transistors, percolation network, selective dispersion, THIN-FILM TRANSISTORS, SELECTIVE DISPERSION, INTEGRATED-CIRCUITS, LOGIC-CIRCUITS, MOBILITY, INKS, POLYMERS, PROGRESS, DEVICES, ARRAYS",

author = "Bisri, {Satria Zulkarnaen} and Jia Gao and Vladimir Derenskyi and Widianta Gomulya and Igor Iezhokin and Pavlo Gordiichuk and Andreas Herrmann and Loi, {Maria Antonietta}",

year = "2012",

month = dec,

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doi = "10.1002/adma.201202699",

language = "English",

volume = "24",

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journal = "Advanced materials",

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AU - Bisri, Satria Zulkarnaen

AU - Gao, Jia

AU - Derenskyi, Vladimir

AU - Gomulya, Widianta

AU - Iezhokin, Igor

AU - Gordiichuk, Pavlo

AU - Herrmann, Andreas

AU - Loi, Maria Antonietta

PY - 2012/12/4

Y1 - 2012/12/4

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AB - Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

KW - carbon nanotubes

KW - ambipolar field-effect transistors

KW - percolation network

KW - selective dispersion

KW - THIN-FILM TRANSISTORS

KW - SELECTIVE DISPERSION

KW - INTEGRATED-CIRCUITS

KW - LOGIC-CIRCUITS

KW - MOBILITY

KW - INKS

KW - POLYMERS

KW - PROGRESS

KW - DEVICES

KW - ARRAYS

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DO - 10.1002/adma.201202699

M3 - Article

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EP - 6152

JO - Advanced materials

JF - Advanced materials

SN - 0935-9648

IS - 46

ER -