High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

Satria Zulkarnaen Bisri*, Jia Gao, Vladimir Derenskyi, Widianta Gomulya, Igor Iezhokin, Pavlo Gordiichuk, Andreas Herrmann, Maria Antonietta Loi

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The performance demonstrates the effectiveness of this process to purify semiconducting nanotubes and to remove the residual polymer.

Original languageEnglish
Pages (from-to)6147-6152
Number of pages6
JournalAdvanced materials
Volume24
Issue number46
DOIs
Publication statusPublished - 4-Dec-2012

Keywords

  • carbon nanotubes
  • ambipolar field-effect transistors
  • percolation network
  • selective dispersion
  • THIN-FILM TRANSISTORS
  • SELECTIVE DISPERSION
  • INTEGRATED-CIRCUITS
  • LOGIC-CIRCUITS
  • MOBILITY
  • INKS
  • POLYMERS
  • PROGRESS
  • DEVICES
  • ARRAYS

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