An imaging device (100) comprises a stack of photoactive layers (11) including at least a p-type photoactive layer (11p) and an n-type photoactive layer (11n). The photoactive layers comprise quantum dots (QD) formed by semiconductor nanocrystals capped by ligands. Readout electronics comprise electrodes (13t,13b) sandwiching the photoactive layers (11). At least one of the electrodes (13b) is divided in respective pixels (10p) for collecting photo-generated charges from respective parts of the photoactive layers. Each pixel (10p) comprises an amplification circuit to amplify the photo-generated charge, preferably using a DG-FET. An intermediate layer (11i) can be provided between the p- and n-type photoactive layers (11p, 11n).
|Publication status||Published - 5-Mar-2020|